BSP299 E6327

BSP299 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 299 500 V 0.4 A 4Ω SOT-223 BSP299 Type BSP 299 Pb-free Yes Pin 3 Pin 4 S D Tape and Reel Information L6327 Maximum Ratings Parameter Symbol Continuous drain current ID TA = 25 °C Values Unit A 0.4 DC drain current, pulsed IDpuls TA = 25 °C 1.6 Avalanche energy, single pulse mJ E AS ID = 1.2 A, RGS = 25 Ω T j = 25 °C 130 Gate source voltage V GS Power dissipation P tot TA = 25 °C V W 1.8 ESD Class JESD22-A114-HBM Rev 2.3 ± 20 Class 1b 1 2011-06-01 BSP299 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 70 Therminal resistance, junction-soldering point R thJS ≤ 25 Values DIN humidity category, DIN 40 040 Unit °C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage 500 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 500 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 500 V, V GS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current nA IGSS V GS = 20 V, VDS = 0 V Drain-Source on-state resistance - 100 Ω RDS(on) V GS = 10 V, ID = 0.4 A Rev 2.3 10 - 2 3.1 4 2011-06-01 BSP299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs V DS≥ 2 * ID * RDS(on)max, ID = 0.4 A Input capacitance 0.3 pF 300 400 - 40 60 - 15 25 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 1.2 ns td(on) V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time - 8 12 - 15 22 - 55 70 - 30 40 tr V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rev 2.3 3 2011-06-01 BSP299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 °C Inverse diode direct current,pulsed - 1.6 - 0.9 1.2 ns trr - 300 µC Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Rev 2.3 - V V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 0.4 V SD V GS = 0 V, IF = 0.8 A, Tj = 25 °C Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage - - 4 2.5 - 2011-06-01 BSP299 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.45 W A 1.6 ID 0.35 1.4 0.30 1.2 0.25 1.0 0.20 0.8 0.15 0.6 0.10 0.4 0.05 0.2 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C 120 °C 160 TA Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev 2.3 5 2011-06-01 BSP299 Typ. output characteristics ID = ƒ(VDS) parameter: V , Tj = 25 °C Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V , Tj = 25 °C GS GS 0.9 0.9 14 0.9 jh g e AA Ptot = k ifd 5V2W 10V l 13 ID ȍ Ω13 b c 0.8 0.8 A 4.5V 4.5V 11 VGS [V] 0.7 0.7 0.7 0.6 0.6 0.6 4V 4V 0.5 0.5 a 0.5 0.4 0.4 0.4 0.3 0.3 0.3 0.2 0.2 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 5 k 10.0 4 4 l 20.0 RDS (on) 10 10 9 9 8 7 6 5 8 7 4.5V 6 l 0.1 0.1 2 2 V GS [V] = a b 4.5 c 5.0 1 1 4.0 0 0 0 0 2 2 2 4 4 4 6 6 6 8 8 8 10 10 10 0 12 14 12 V V 14 12 V e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 0 0.10 0.1 0.20 0.2 0.30 0.3 0.40 0.4 VDS A ID Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, 2.6 2.6 A S 2.2 D  2.2 g 2.0 fs 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 1 2 3 4 5 6 7 8 V V Rev 2.3 0.60 0.5I A 0.6 D Typ. transfer characteristics ID = f(VGS) I k l 10.0 20.0 0 0.00 16 d 5.5 b d figc ke 10V jh 3 3 0.1 0 11 a 0.2 0.0 a4V 12 10 0.0 0.4 0.8 1.2 1.6 A 2.2 ID GS 6 2011-06-01 BSP299 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.4 A, VGS = 10 V 10 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 11 4.6 ȍ V Ω 10 98% 4.0 RDS (on) 8 9 VGS(th) 3.6 8 7 6 2.8 6 2.4 98% 5 5 2% typ typ 2.0 4 4 3 typ 3.2 98% 7 1.6 3 1.2 2 2 0.8 1 1 0 -60 -20 -60 -20 0 0.4 20 20 60 60 100 140 180 100 °C 160 Tj Typ. capacitances 0.0 -60  -20 20 60 100 °C 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 10 1 nF A IF C 10 0 10 0 C iss 10 -1 10 -1 Tj = 25 °C typ Tj = 150 °C typ C oss Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 -2 0 5 10 15 20 25 30 V V Rev 2.3 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD DS 7 2011-06-01 BSP299 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 Ω, L = 163 mH EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 140 600 mJ V 120 580 110 V(BR)DSS570 100 560 550 90 540 80 530 70 520 60 510 50 500 40 490 30 480 20 470 10 0 460 450 20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Safe operating area ID=f(VDS) Typ. gate charge parameter : D = 0.01, TC=25° =25°C VGS=f(Qgate); ID=0.4 A pulsed VDD =200 V 16 V V GS 14 12 10 8 6 4 2 0 0 5 10 15 nC 20 Q gate Rev 2.3 8 2011-06-01 BSP299 Package outlines SOT-223 Dimensions in mm Rev 2.3 9 2011-06-01 BSP299 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 10 2011-06-01